Gigabyte GA-E350N-USB3 @ iXBT Labs
“The CPU VRM has 3 phases, with 2 Low RDS(on) MOSFETs per phase and ferrite chokes. There are 5 x 820 µF and 4 x 100 µF capacitors, all solid. The copper power and ground layers are double-thick. Processors with the TDP of up to 140W are supported. In other words, GA-E350N-USB3 meets Gigabyte’s own Ultra Durable requirements.”